Research Interests:

Modeling and simulation of nanoscale sensors based on quasi-one-dimensional materials like carbon nanotubes and oxide nanowires. Quantum simulation of nanoelectronic and nanooptoelectronic devices.

Dr. Guo has developed atomistic quantum simulation approaches for charge sensors based on onedimensional nanomaterials like carbon nantoubes. The simulator resolves to atomistic details of the nanodevices, and treats self-consistently electrostatics and non-equilibrium carrier statistics using the non-equilibrium Green’s function (NEGF) formalism. He is interested in developing compact circuit models guided by detailed device simulation for nanoscale sensors, which provides the basis for evaluating the circuit and system performance of a nanosensor network. His research interest also includes efficient simulation algorithms and parallel simulation algorithms to enable large scale device simulations.

- J. Guo, S. Datta, M. Lundstrom and M. P. Anantram, “Toward Multiscale Modeling of Carbon Nanotube Transistors,” International Journal for Multiscale Computational Engineering, vol. 2, p. 257-276, 2004
- Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai, “Ballistic Carbon Nanotube Field-Effect Transistors,” Nature, vol. 424, p. 654, 2003