Research Interests:

Electronic materials, semiconductor processing and characterization, ion implantation, transmission electron microscopy, doping issues for Si nanometer scaling devices, transmission electron microscopy characterization of nano-scale defects and devices. Professor Jones has spent the past 15 years studying the processing of semiconductors. He is an internationally recognized expert in the field of processing and characterization of semiconductors. He has focused on the processing of both microelectronic and photonic devices. He is most renown in the area of characterization of processing induced defects after either ion implantation or epitaxial growth. His paper on the defects that arise from ion implantation of silicon is the second most widely cited paper in the field worldwide. He has been invited to give talks in over a dozen countries on five continents. Recently he has been working with Professor Mark Law to establish an international center of excellence in the area of understanding and modeling the front end processing steps used in the manufacturing of silicon integrated circuits. This center (SWAMP; SoftWare and Analysis of Advanced Materials Processing) has become internationally recognized as a premier center for the study of advanced silicon integrated circuit processing.