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Art Hebard

Art Hebard

Distinguished Professor, Department of Physics, University of Florida

Phone: (352) 392-8842

Fax: (352) 392-3591

2257 New Physics Building,
PO Box 118440, Gainesville, FL 32611
352.392.9228 (lab), 352.338-9242 (home)



Sept 1958 - June 1962: BA in Physics, Yale University (Magna Cum Laude, Phi Beta Kappa); Sept 1962 - June 1964: MS in Physics, Stanford University; Sept 1964 - Jan. 1971: PhD in Physics, Stanford University

Research Interests:

“Graphene/GaN Schottky Diodes: Stability at Elevated Temperatures”, S. Tongay, M. Lemaitre, T. Schumann, K. Berke, B. R. Appleton, B. Gila and A. F. Hebard, Appl. Phys. Lett. (in press)

“Ultrapure Multilayer Graphene in Bromine Intercalated Graphite”, J. Hwang, J. P. Carbotte, S. Tongay, A. F. Hebard, and D. B. Tanner, Phys. Rev B 84, 041410(R) (2011); (selected as “Editors choice” ).

“Asymmetric metal-insulator transition in disordered ferromagnetic films”, R. Misra, A.F. Hebard, K.A. Muttalib, P. Wölfle, Physical Review Letters, 107, 037201 (2011).

“Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions”, Guneeta Singh-Bhalla, Christopher Bell, Jayakanth Ravichandran, Wolter Siemons, Yasuyuki Hikita, Sayeef Salahuddin, Arthur F. Hebard, Harold Y. Hwang and Ramamoorthy Ramesh, Nature Physics 7, 80 (2011).

“Magnetically Driven Single DNA Nanomotor”, S. Bamrungsap, J. A. Phillips, X. L. Xiong, Y. Kim, H. Wang, H. Liu, A. Hebard and W. Tan, SMALL 7(5), 601-605 (2011).

“Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping”, S. Tongay, T. Schumann, X. Miao, B.R. Appleton and A.F. Hebard, Carbon 49(6), 2033 (2011).